Samsung Electronics is entering a new dimension in semiconductor chip technology.
The company announced plans for continuous process technology migration to 3- and 2-nanometer that is based on its Gate-All-Around (GAA) transistor structure. This will allow for greater power and performance, lower energy consumption and more design options for electronic products such as televisions, smartphones and memory chips, it said in a news release.
"Samsung's first 3nm GAA process node utilizing MBCFET will allow up to 35% decrease in area, 30% higher performance or 50% percent lower power consumption compared to the 5nm process," a news release said. "In addition to power, performance, and area improvements, as its process maturity has increased, 3nm’s logic yield is approaching a similar level to the 4nm process, which is currently in mass production."
Samsung will start producing the first 3nm-based chip designs in the first half of 2022 and the second generation of 3nm in 2023. Mass production of the 2nm process could begin in 2025.
"We will increase our overall production capacity and lead the most advanced technologies while taking silicon scaling a step further and continuing technological innovation by application,” said Siyoung Choi, president and head of Foundry Business at Samsung Electronics. "Amid further digitalization prompted by the COVID-19 pandemic, our customers and partners will discover the limitless potential of silicon implementation for delivering the right technology at the right time."