A new development in semiconductor research has marked a significant advancement in the United Kingdom. Utilizing an AIXTRON close-coupled showerhead deposition system, researchers have developed next-generation semiconductor materials capable of efficiently supporting high voltages, power densities, and frequencies, crucial for the performance of electric vehicles, renewable energy sources, and 5G communications.
This breakthrough involves the precise production of high-quality crystalline thin film gallium oxide on 4-inch wafers, which have demonstrated uniformity and high quality. The newly established Oxide and Chalcogenide Metalorganic Chemical Vapor Deposition (MOCVD) Laboratory at the Centre for Integrative Semiconductor Materials (CISM) is set to become a national hub for thin film gallium oxide research in power electronics, deep-UV photodetectors, and transparent conductive oxide applications.
The achievement is particularly significant for the South Wales advanced semiconductor cluster, CSconnected, which includes leading semiconductor companies like Vishay, KLA, Microchip, and IQE. The timing of the breakthrough coincides with a £250 million investment by Vishay, along with the UK Government's Automotive Transformation Fund, to enhance semiconductor manufacturing at its Newport facility.
Professor John Heffernan from the National Epitaxy Facility stated, “Swansea University’s MOCVD capability is now accessible to researchers through direct collaboration. Researchers can also gain access to feasibility studies through Swansea partnering with the UK National Epitaxy Facility’s Pump Priming scheme. This initiative ensures that academic and industrial partners can leverage Swansea’s expertise in epitaxial thin film growth to accelerate their research and technology development."
Dr. Dan Lamb, Research Lead at the Oxide and Chalcogenide MOCVD Centre at Swansea University, expressed excitement about the new facility, saying: “This new facility represents a major step forward for our research, and I’m incredibly excited about the possibilities it unlocks for novel materials and device development. With this advanced equipment, we can push the boundaries of our existing work while also creating new opportunities for collaboration with research groups across the UK and beyond."
Sam Evans, Director of Quality Assurance and External Affairs at Vishay Newport, emphasized the development's importance: "This is a major step forward for wide band gap materials innovation in our South Wales Semiconductor Cluster, underpinning efforts to grow regional manufacturing in advanced power electronics such as Vishay’s recently announced £250M investment in SiC component expansion.”